Inverted epitaxial process

Fishing – trapping – and vermin destroying

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437 31, 437 74, 437946, 437974, 148DIG11, 148DIG12, H01L 2120, H01L 2176

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050047051

ABSTRACT:
A process for fabricating a semiconductor device by forming a diffusion region in a first semiconductor wafer and bonding the surface of the first semiconductor wafer having the diffused region to a second semiconductor wafer to form a low resistance buried layer. The process includes further diffusion to provide an external electrical contact with the buried layer. Further enhancements are provided by selectively forming voids and/or selectively applying materials of greater and lesser conductivity on at least one of the semiconductor wafers before bonding, forming complex internal semiconductor structures in the bonded wafer structures.

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