Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1991-05-16
1994-02-08
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118725, 118728, 156611, 156613, C23C 1600
Patent
active
052845192
ABSTRACT:
This invention relates to a novel inverted diffuser stagnation point flow reactor which can be used for vapor deposition of thin solid films on substrates. A metalorganic chemical vapor deposition reactor comprising a gas mixing chamber with gas entry ports into the mixing chamber; a substrate for deposition thereon of solid film; and a gas outlet for conveying gas away from the substrate, characterized by a capillary plug positioned at the base of an inverted diffuser between the mixing chamber and the substrate, the capillary plug serving to streamline the flow of gas to the substrate.
REFERENCES:
patent: 3391270 (1968-07-01), Harris
patent: 4565157 (1986-01-01), Brors
patent: 4650539 (1987-03-01), Irvine
patent: 4732110 (1988-03-01), Parsons
patent: 4774416 (1988-09-01), Askary
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4817558 (1989-04-01), Itoh
patent: 4825809 (1989-05-01), Mieno
patent: 4911102 (1990-03-01), Manabe
patent: 4980204 (1990-12-01), Fujii
patent: 5000113 (1991-03-01), Wang
Matsumoto, J. Crystal Growth 77 (1986) 151-156.
H. M. Cox et al., Vapor Levitation Epitaxy: System Design and Performance, Journal of Crystal Growth, vol. 79, 1986, pp. 900-908.
P. Lee et al., MOCVD in an Inverted Stagnation Point Flow, Journal of Crystal Growth, vol. 77, 1986, pp. 120-127.
A. G. Thompson et al., Growth of GaAs in a Rotating Disk MOCVD Reactor, Journal of Crystal Growth, vol. 94, 1989, pp. 901-910.
A. Sherman, Modeling of Chemical Vapor Deposition Reactors, Journal of Electronic Materials, vol. 17, No. 5, 1988, pp. 413-423.
K. F. Jensen, Modeling of Chemical Vapor Deposition Reactors, Proc. of 9th Intl. Conf. on CVD, pp. 3-20, Med. Robinson, G. W. Cullen, C. H. J. van den Brekel and J. M. Blocher (eds.), The Electrochemical Society Inc., Pennington NJ, U.S.A.
L. M. Fraas et al., Epitaxial Films Grown by Vacuum MOCVD, Journal of Crystal Growth, vol. 68, 1984, pp. 490-496.
Bueker Richard
Simon Fraser University
LandOfFree
Inverted diffuser stagnation point flow reactor for vapor deposi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Inverted diffuser stagnation point flow reactor for vapor deposi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inverted diffuser stagnation point flow reactor for vapor deposi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-695213