Inverted BJT current sources/sinks in RF circuits and methods

Details Inverted BJT current sources/sinks in RF circuits and methods Inverted BJT current sources/sinks in RF circuits and methods

1995-07-28

1997-08-05

Tran, Toan

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327482, 327574, H03K 1760

Patent

active

056546629

ABSTRACT:
A integrated circuit, high impedance, current source/sink for wireless communications systems comprising one or more inverted bipolar junction transistors, and a method of ensuring high output impedance at RF frequencies. Mixers, differential amplifiers and transconductance amplifiers are disclosed as is the physical structure of bipolar transistors including heterojunction transistors.

REFERENCES:
patent: 4140926 (1979-02-01), Price
patent: 4326135 (1982-04-01), Jarrett et al.
patent: 4669026 (1987-05-01), Widlar
patent: 5317208 (1994-05-01), Banker et al.

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