Inversion implant isolation process

Details Inversion implant isolation process Inversion implant isolation process

1993-11-19

1996-01-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 33, 437157, 437986, H01L 21265, H01R 2122

Patent

active

054828740

ABSTRACT:
A method for improving the performance of a walled emitter bipolar-junction transistor and the improved walled emitter bipolar junction transistor resulting therefrom are disclosed. The method involves the incorporation of a p-type dopant, preferably boron, at the intersection of the isolation oxide and the emitter-base region. The selective implantation does not affect the transistor's function in any significant way, does not complicate the fabrication process to any significant degree and eliminates known problems of intrinsic base boron segregation and oxide charges in known walled emitter bipolar junction transistors.

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