Inverse-T LDDFET with self-aligned silicide

Details Inverse-T LDDFET with self-aligned silicide Inverse-T LDDFET with self-aligned silicide

1989-02-06

1990-03-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437186, 437233, 437229, 437228, 357 233, 156643, H01L 21265

Patent

active

049065890

ABSTRACT:
A method of fabricating an inverse-T LDDFET with salicide on a substrate is disclosed. The initial steps include anisotropic silicon nitride and incomplete polysilicon etching steps followed by an n.sup.- ion-implantation process. Then oxide sidewall spacers are formed and the unmasked polysilicon is removed completely. The LDDFET structure is formed by the implantation of ions to form heavily-doped source and drain regions. Thereafter oxide sidewall spacers are removed and the thin polysilicon step is oxidized completely. After the silicon nitride and silicon dioxide layers are removed, the self-aligned silicide is applied to form the inverse-T LDDFET with salicide.

REFERENCES:
patent: 4818715 (1989-04-01), Chao
Huang et al., "A Novel Submicron LDD Transistor With Inverse-T Gate Structure", IEDM 1986, pp. 742-745.
Ohta et al., "A Quadruply Self-Aligned MOS (QSA MOS) A New Short Channel High Speed High Density MOSFET for VSLI" IEDM 1979, pp. 581-584.

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