Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-04-05
2005-04-05
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S228000
Reexamination Certificate
active
06876016
ABSTRACT:
A method is disclosed for forming an image sensor. In a semiconductor wafer containing a p-type region an n-type connection region is formed within the p-type region. An n-type photodiode region is formed in the p-type region connected to the connection region. A field oxide isolation region is formed, having a part that is over portions of the n-type connection region and the n-type photodiode region. This part of the field oxide region covers the area where these regions are connected and extends into these regions. The edges of this part of the field oxide region fall within these regions, while leaving a distance between these edges and pn junctions formed by the connection region and the p-type region and the n-type photodiode region and p-type region. A gate oxide is formed over regions not covered by field oxide. An extended gate structure is formed extending from above this part of the field oxide isolation region to a distance beyond the connection region so as to accommodate a channel of an n-channel MOSFET. The drain region of the n-channel MOSFET is formed, with the connection region acting as the source. A blanket transparent insulating layer is deposited.
REFERENCES:
patent: 5625210 (1997-04-01), Lee et al.
patent: 5939742 (1999-08-01), Yiannoulos
patent: 6169318 (2001-01-01), McGrath
patent: 6171882 (2001-01-01), Chien et al.
patent: 6504195 (2003-01-01), Guidash
Abraham Fetsum
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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