Introducing signal at low noise level to charge-coupled circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307221C, H01L 2978

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active

039861988

ABSTRACT:
The first potential well of a charge-coupled device (CCD) register is initially filled from a source diffusion and then the effective depth of this well is reduced and the excess charge removed. The depth reduction and charge removal may be concurrently accomplished by changing the relative potential between the source diffusion and the electrode or electrodes producing the first potential well in a sense to cause this diffusion to operate as a drain for the excess charge. The charge remaining in the first potential well is relatively noise free, that is, it is at a predictable and reproducible level.

REFERENCES:
patent: 3789267 (1974-01-01), Krambeck et al.
patent: 3881117 (1975-04-01), Tompsett
W. Engeler et al., "A Memory System Based on Surface-Charge Transport," IEEE J. OFS-S, CKTS, vol. 5C-6 No. 5, Oct. 1971, pp. 306-313.
W. Kosonocky et al., "Charge-Coupled Digital Circuits," IEEE J. OFS-S, CKTS, vol. SC-6 No. 5, Oct, 1971, pp. 314-322.
R. Krambeck et al., "A Doped Surface Two-Phase CCD," Bell System Tech. J., vol. 51, No. 8, Oct. 1972, pp. 1849-1866.

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