Introducing lattice defect with ice particles in semiconductor w

Details Introducing lattice defect with ice particles in semiconductor w Introducing lattice defect with ice particles in semiconductor w

1987-11-16

1989-04-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 11, 437 20, 437939, H01L 21463

Patent

active

048206504

ABSTRACT:
The invention employs ice for introducing lattice defect into a semiconductor wafer, and is constructed to introduce particles of ice into the semiconductor wafer by ionizing (24) and accelerating (25) the particles of ice, whereby backside damage can be provided on the semiconductor wafer without leaving a pollutant source of the semiconductor wafer.

REFERENCES:
patent: 3905162 (1975-09-01), Lawrence et al.
patent: 4018626 (1977-04-01), Schwuttke et al.
patent: 4551744 (1985-11-01), Suzuki
patent: 4587771 (1986-05-01), Buchner et al.

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