Introducing a metal layer between SiN and TiN to improve CBD...

Details Introducing a metal layer between SiN and TiN to improve CBD... Introducing a metal layer between SiN and TiN to improve CBD...

2008-09-08

2009-12-15

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S737000, C257S748000, C257S750000, C257S758000, C257S774000, C257SE21476

Reexamination Certificate

active

07633165

ABSTRACT:
The present disclosure provide an integrated circuit. The integrated circuit includes a through-silicon-via (TSV) trench configured in a semiconductor substrate; a conductive pad formed on the semiconductor substrate, the conductive pad being adjacent the TSV trench; a silicon nitride layer disposed over the conductive pad and in the TSV trench; a titanium layer disposed on the silicon nitride layer; a titanium nitride layer disposed on the titanium layer; and a copper layer disposed on the titanium nitride layer.

REFERENCES:
patent: 7399706 (2008-07-01), Omoto et al.

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