Intrinsically doped semiconductor structure and method for makin

Details Intrinsically doped semiconductor structure and method for makin Intrinsically doped semiconductor structure and method for makin

1992-11-02

1994-03-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 14, 257 25, 257197, 257201, H01L 29161, H01L 29205

Patent

active

052987639

ABSTRACT:
A semiconductor structure that provides intrinsic doping from native defects is provided. A quantum well including a narrow bandgap material (11, 14) having a low concentration of native defects is sandwiched between two wide bandgap spacer layers (12, 20, 17, 15). The spacer layers (12, 20, 17, 15) have a low concentration of native defects. At least one doping region (13, 16) having a high concentration of native defects positioned adjacent to one of the undoped spacer layers (12, 17).

REFERENCES:
patent: 4743951 (1988-05-01), Chang et al.
patent: 5079601 (1992-01-01), Esake et al.
patent: 5113231 (1992-05-01), Soderstrom et al.
patent: 5124771 (1992-06-01), Taira et al.
patent: 5159421 (1992-10-01), Wolff
Beresford et al., App. Phys. Lett. vol. 56, No. 10, Mar. 5, 1990, pp. 952-954.
Longenbach et al. "Resonant Interband Tunneling in INAS/GaSb/InAs and GaSb/InAS/AlSb/GaSb Heteerostructures", Appl. Phys. Lett., vol. 57, #15 Oct. 8, 1990, pp. 1554-1556.

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