Metal treatment – Stock – Ferrous
Patent
1994-04-12
1995-05-30
Breneman, R. Bruce
Metal treatment
Stock
Ferrous
437105, 437107, 437132, 437174, 117 84, H01L 21203
Patent
active
054197856
ABSTRACT:
An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.
REFERENCES:
patent: 5170226 (1992-12-01), Fukuzawa et al.
patent: 5281543 (1994-01-01), Fukuzawas et al.
patent: 5306662 (1994-04-01), Nakamura et al.
Tadayon et al., "Electrical Characterization of Low Temperature GaAs Laye and Observation of the Extremely Large Carrier Concentrations in Undoped Material", printed in J. Vac. Sci. Technol. B (10(3), May/Jun. 1992, pp. 1074-1077.
Twigg et al. , "Solid-Phase Regrowth of Amorphous GaAs Grown by Low-Temperature Molecular-Beam Epitaxy", printed in Appl. Phys. Lett. 63 (3), 19 Jul. 1993, pp. 320-321.
Substrate temperature dependence of--; Mahalingam et al; J. Vac. Sci. Tech. B9, Jul./Aug. 1992, pp. 2328.
Formation of As precipitates--; Claverie et al., Appl. Phys. Letters 62, Mar. 1993, pp. 1271-1273.
Arsenic preciptates--; Warren et al.; Appl. Phys. Letters 57(13), Sep. 1990, pp. 1331--1333.
Fatemi Mohammad
Tadayon Bijan
Twigg Mark E.
Breneman R. Bruce
Kap George A.
McDonnell Thomas E.
Paladugu Ramamohan Rao
The United States of America as represented by the Secretary of
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