Intrinsic impurity band conduction detectors

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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357 58, 357 30, H01J 4014, H01L 2912

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active

049623044

ABSTRACT:
Electromagnetic energy is detected by providing an extrinsic impurity-band semiconducting region with a first conductivity type impurity concentration high enough to create an impurity energy band. An intrinsic semiconducting blocking region is provided with first and second conductivity type impurity concentrations which are low enough that substantially no charge transport occurs by an impurity conduction mechanism. An electrical potential is applied to the impurity-band and blocking regions to create an electric field across the regions, then the regions are exposed to electromagnetic energy to generate intrinsic charge carriers in the regions. The electrical current induced in the regions as a result of the intrinsic charge carrier generation is measured.

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