Intra-chip power and test signal generation for use with...

Details Intra-chip power and test signal generation for use with... Intra-chip power and test signal generation for use with...

2007-11-05

2009-10-20

Karlsen, Ernest F (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C438S017000

Reexamination Certificate

active

07605597

ABSTRACT:
The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.

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