Intra-cavity loss-modulated diode laser

Details Intra-cavity loss-modulated diode laser Intra-cavity loss-modulated diode laser

1984-07-11

1986-01-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 26, H01S 319

Patent

active

045637652

ABSTRACT:
An amplitude-modulated diode laser, fabricated from a double heterostructure wafer, having a passive central layer which is partially doped to permit amplification. Losses are modulated in another section of the wafer, electrically isolated from the doped amplifying section, by reverse biasing a P-N junction also formed by doping.

REFERENCES:
Tsang et al., "Intracavity Loss Modulation of GaInAsP Diode Lasers", Appl. Phys. Lett. 38(3), Feb. 1, 1981, pp. 120-122.
Tsang et al., "Intracavity-Loss-Modulated GaInAsP Diode Lasers", IEEE Transactions on Electron Devices, vol. ED-27, No. 11, Nov. 1980, p. 2192.

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