Intra-cavity lens structures for semiconductor lasers

Details Intra-cavity lens structures for semiconductor lasers Intra-cavity lens structures for semiconductor lasers

1997-02-06

1998-10-13

Bovernick, Rodney B.

Coherent light generators

Particular resonant cavity

Specified cavity component

372 46, 372 50, 257432, H01S 30941

Patent

active

058223568

ABSTRACT:
An improved lens structure is provided which reduces the scattering and/or reflection losses in an optical cavity. The lens comprising at least a first, second and third lens layer arranged vertically, the first and third lens layers being oxidized in first and third oxidized regions adjacent to first and third non-oxidized regions, the second layer disposed between the first and third layers and comprising a non-oxidized semiconductor material, the first and third non-oxidized regions comprising a semiconductor material, each of the oxidized regions having an aluminum contents greater than 20%; and appropriately spacing the first lens layer from the third lens layer to reduce the scattering and/or reflection losses in an optical cavity.

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