Intersubband detector with avalanche multiplier region

Details Intersubband detector with avalanche multiplier region Intersubband detector with avalanche multiplier region

2007-09-18

2007-09-18

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S017000, C257S186000, C257SE31064

Reexamination Certificate

active

10965702

ABSTRACT:
A photodetector for use at wavelengths of 2 μm and longer has an intersubband absorption region to provide absorption at wavelengths beyond 2 μm, integrated with an avalanche multiplier region to provide low-noise gain. In one particular design, the intersubband absorption region is a quantum-confined absorption region (e.g., based on quantum wells and/or quantum dots).

REFERENCES:
patent: 5936266 (1999-08-01), Holonyak et al.
patent: 6229152 (2001-05-01), Dries et al.
patent: 6888170 (2005-05-01), Schaff et al.
patent: 2003/0047752 (2003-03-01), Campbell et al.
patent: 2003/0173578 (2003-09-01), Schaff et al.
Notification of Transmittal of the International Search Report and the Written Opinion, PCT/US04/34152, Nov. 8, 2005, 8 pages.

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