Interstitital doping in III-V semiconductors to avoid or suppres

Details Interstitital doping in III-V semiconductors to avoid or suppres Interstitital doping in III-V semiconductors to avoid or suppres

1991-05-08

1992-08-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 22, 437 96, 437104, 437133, 148DIG97, 148DIG84, H01L 21265

Patent

active

051399601

ABSTRACT:
Interstitial incorporation of Group III or Group V dopants, such as As, Sb, Ga, Al or B, in a III-V semiconductor, such as GaAs or Al.sub.x Ga.sub.1-x As, in the absence of any substitutional doping via a Group IV or Group VI dopant, will substantially eliminate, if not completely suppress, the formation of deep donor levels or DX centers in the III-V semiconductor.

REFERENCES:
patent: 4383872 (1983-05-01), Roberts
patent: 4618381 (1986-10-01), Sato et al.
patent: 4670176 (1987-06-01), Morioka et al.
patent: 4685979 (1987-08-01), Nishizawa
patent: 4689094 (1987-08-01), Van Rees et al.
patent: 4717681 (1988-01-01), Curran
patent: 4745448 (1988-05-01), Van Rees et al.
D. V. Lang et al. "Trapping Characteristics and a Donor-Complex (DX) Model for the Persistent-Photoconductivity Trapping Center in Te-Doped Al.sub.X Ga.sub.1-x As", Physical Review B, vol. 19(2), pp. 1015-1030, Jan. 15, 1979.
D. V. Lang et al., "Large-Lattice-Relaxation Model for Persistent Photo-Conductivity in Compound Semiconductors", Physical Review Letters, vol. 39(10), pp. 635-639, Sep. 15, 1977.
D. V. Lang, Chapter 7 entitled "DX Centers in III-V Alloys" in the book, Deep Centers in Semiconductors, edited by S. T. Pantelides, pp. 489-539 (Gordon and Breach, N.Y., 1986).
M. Mizuta et al., "Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System", Japanese Journal of Applied Physics, vol. 24(2), pp. L143-L146, Feb. 1985.
N. Lifshitz et al., "Pressure and Compositional Dependence of the Hall Coefficient in Al.sub.x Ga.sub.1x As and Their Significance", Physical Review B, vol. 21(2), pp. 670-678, Jan. 25, 1980.
T. N. Theis et al., "Electron Localization by a Metastable Donor Level in n-GaAs: A New Mechanism Limiting the Free-Carrier Density", Physical Review Letters, vol. 60(4), pp. 361-364, Jan. 25, 1988.
J. R. Kirtley et al., "Noise Spectroscopy of Deep Level (DX) Centers in GaAs-Al.sub.x Ga.sub.1-X As Heterostructures", Journal of Applied Physics, vol. 63(5), pp. 1541-1548, Mar. 1, 1988.
P. M. Mooney et al., "Evidence for Large Lattice Relaxation at the DX Center in Si-Doped Al.sub.x Ga.sub.1-x As", Physical Review B, vol. 37(14), pp. 8298-8307, May 15, 1988.
R. J. Higgins et al., "Mobility Enhancement of Modulation-Doped Materials by Low-Temperature Optical Annealing of Spacer-Layer Defect Charge State", Physical Review B, vol. 36, pp. 2707-2712, Aug. 15, 1987.
J. A. Van Vechten and J. F. Wager "Consequences of Anion Vacancy Nearest-Neighbor Hopping in III-V Compound Semiconductors: Drift in InP Metal-Insulator-Semiconductor Field Effect Transistors", Journal of Applied Physics, vol. 57(6), pp. 1956-1960, May 15, 1985.
J. F. Wager and J. A. Van Vechten, "Atomic Model for the M Center in InP", Physical Review B, vol. 32(8), pp. 5251-5258, Oct. 15, 1985.
T. N. Morgan, "Theory of the DX Center in Al.sub.x Ga.sub.1-x As and GaAs Crystals", Physical Review B, vol. 34, pp. 2664-2669, Aug. 15, 1986.
H. P. Hjalmarson et al. "Deep Donor Model for the Persistent Photoconductivity Effect", Applied Physics Letters, vol. 48(10), pp. 656-658, Mar. 10, 1986.
M. F. Li et al., "Effect of Boron on the Deep Donors (DX) Centers in GaAs:Si", Applied Physics Letters, vol. (to be published Apr. 1989).
M. F. li et al., "Effect of Boron on the Pressure Induced Deep Donors in GaAs:Si", Meeting and Bulletin of the American Physical Society, vol. 33(3), p. 439, Mar. 21-25, 1988, New Orleans, La.
P. Basmaji et al., "Enhancement of the Free Carrier Density in Ga.sub.1-x Al.sub.x As Grown by Metalorganic Vapor Phase Epitaxy Under High Temperature Growth Conditions", Physica status solidi(a), vol. 100, pp. K41-K45, 1987.
D. J. Chadi et

Affiliated with

Also associated with

Rating

Interstitital doping in III-V semiconductors to avoid or suppres does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interstitital doping in III-V semiconductors to avoid or suppres, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interstitital doping in III-V semiconductors to avoid or suppres will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1248736