Interrupted liquid phase epitaxy process

Details Interrupted liquid phase epitaxy process Interrupted liquid phase epitaxy process

1988-04-11

1989-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437129, 437130, 437119, 156DIG89, 156622, 148DIG66, 148DIG101, 357 16, 357 17, 372 43, 372 48, 372102, H01L 21208, H01R 2120

Patent

active

048596280

ABSTRACT:
An interrupted liquid phase epitaxy process for producing distributed feedback laser wafers involves epitaxial growth at a first temperature range followed by epitaxial growth at a second higher temperature range. A prior art liquid phase epitaxy process involves a low temperature soak at a temperature of approximately 615 degrees Centrigrade followed by ramped cooling and epitaxial growth of a guiding layer, active layer and confining layer at a temperature of approximately 595 degrees Centigrade. The interrupted liquid phase epitaxy process involves epitaxial growth of a guiding layer in a manner similar to the prior art process, but growth of the guiding layer is followed by a high temperature soak at a temperature of approximately 645 degrees Centrigrade. Ramped cooling follows, with epitaxial growth of the active layer and confining layer taking place at a temperature of approximately 628 degrees Centigrade. Epitaxial growth at the higher temperature reduces difficulties with spinodal decomposition and allows improved control over the amount of phosphorus used in the process.

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