Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2008-05-06
2008-05-06
Pham, Thanhha S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S700000, C257S723000, C257SE23067, C257SE23174
Reexamination Certificate
active
11249540
ABSTRACT:
A carrier substrate, or interposer, for use in a chip-scale package includes a material, such as a semiconductive material, that has a coefficient of thermal expansion that is the same or similar to that of the semiconductor device to be secured thereto. The interposer may also include a rerouting element laminated over the remainder of the interposer and including one or more dielectric layers, as well as a conductive layer for rerouting the bond pad locations of a semiconductor device with which the interposer is to be assembled. The interposers may be fabricated on a “wafer scale.” Accordingly, a semiconductor device assembly may include a first, semiconductor device-carrying substrate and a second, interposer-comprising substrate. Regions of the second substrate that comprise the boundaries between adjacent interposers may be thinner than other regions of the second substrate, including the regions from which the interposers are formed.
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Micro)n Technology, Inc.
Pham Thanhha S.
TraskBritt
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