Internal voltage generator of semiconductor device

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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C327S156000, C327S534000

Reexamination Certificate

active

08049552

ABSTRACT:
An internal voltage generator of a semiconductor device includes a charge pumping unit for performing a charge pumping operation on the basis of the voltage level of a reference voltage to generate a charge pumped voltage having a voltage level higher than the external power supply voltage; and an internal voltage generating unit for performing a charge pumping operation on the basis of an internal voltage level that is linear with respect to a temperature change in a first temperature range to generate an internal voltage, and to perform a charge pumping operation on the basis of an internal voltage clamping level that is constant independent of a temperature change in a second temperature range to generate the internal voltage.

REFERENCES:
patent: 2007/0279123 (2007-12-01), Byeon et al.
patent: 1020070115712 (2007-12-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on May 27, 2010.

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