Internal voltage generation circuit of semiconductor memory...

Details Internal voltage generation circuit of semiconductor memory... Internal voltage generation circuit of semiconductor memory...

2006-12-29

2008-12-23

Phung, Anh (Department: 2824)

Static information storage and retrieval

Powering

26

Reexamination Certificate

active

07468928

ABSTRACT:
An internal voltage generation circuit of a semiconductor memory device controls a dead zone voltage, in which the driving unit that supplies a power supply voltage, does not need to operate. An internal voltage having a dead zone is determined by first and second driving signals based on a level of a reference voltage, and by selectively supplying first and second voltages by means of the first and second driving signals.

REFERENCES:
patent: 6452854 (2002-09-01), Kato et al.
patent: 7319361 (2008-01-01), Jin
patent: 7362167 (2008-04-01), Park et al.
patent: 2005/0225379 (2005-10-01), Im et al.
patent: 1019950024335 (1995-08-01), None
patent: 1020000045396 (2000-07-01), None
Notice of Patent Grant, May 29, 2007.

Affiliated with

Also associated with

Rating

Internal voltage generation circuit of semiconductor memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Internal voltage generation circuit of semiconductor memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Internal voltage generation circuit of semiconductor memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4043835