Internal voltage generating circuit for semiconductor memory app

Details Internal voltage generating circuit for semiconductor memory app Internal voltage generating circuit for semiconductor memory app

1995-11-15

1998-09-15

Fears, Terrell W.

Static information storage and retrieval

Powering

36518901, 36523001, G11C 1300

Patent

active

058089535

ABSTRACT:
An improved internal voltage generating circuit for a semiconductor memory apparatus capable of enhancing reliability and stability of a burn-in operation by providing the BEN and the BEX which have a certain hysteresis characteristic and capable of previously compensating a possible internal source voltage drop by increasing the level of internal source voltage by supplying a constant current to an external voltage through a driving transistor when a sense amplifying circuit which consume more voltage starts operating, which includes a first reference voltage generator for generating a bias reference voltage; a voltage level detector for detecting an external voltage at the time of a burn-in operation by receiving the output of the first reference voltage generator; a second reference voltage generator for generating a reference voltage which is obtained by amplifying a voltage level by a certain ratio; a standby differential amplifier for comparing the reference voltage outputted from the second reference voltage generator and an internal source voltage and for controlling a drive at the time of a standby; and an active differential amplifier for comparing the reference voltage of the second reference voltage generator and an internal source voltage and for compensating an internal source voltage drop at the time when a sense amplifier becomes activated.

REFERENCES:
patent: 4482985 (1984-11-01), Itoh et al.
patent: 4780854 (1988-10-01), Watanabe et al.
patent: 5077518 (1991-12-01), Han

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