Internal reflection interferometric semiconductor laser apparatu

Details Internal reflection interferometric semiconductor laser apparatu Internal reflection interferometric semiconductor laser apparatu

1986-06-16

1988-09-20

Davie, James W.

Coherent light generators

Particular resonant cavity

372 46, 372 48, 372 50, H01S 319

Patent

active

047730773

ABSTRACT:
A semiconductor laser apparatus comprising: a semiconductor laser chip with a first light-emitting facet and a second light-emitting facet containing an interference effect-creating means therein for creating an interference effect within the resonator(s) thereof, a laser light-reflecting means for returning a part of the laser light emitted from the first light-emitting facet of said semiconductor laser chip to the first light-emitting facet, and a mounting base on which said semiconductor laser chip and said laser light-reflecting means are fixed in a parallel manner.

REFERENCES:
Fattah et al, "Semiconductor Interferometric Laser", Appl. Phys Lett., 41(2), Jul. 1982, pp. 112-114.
Applied Physics Letters, vol. 42, No. 7, 1st Apr. 1983, pp. 562-564, American Inst. of Physics, New York, US; ARSAM Antreasyan et al.
Applied Physics Letters, vol. 40, No. 7, Apr. 1, 1982, pp. 571-573, American Inst. of Physics, New York, US; Hong K. Choi et al.
Patent Abstracts of Japan, vol. No. 218 (E-200) [1363], 28th Sep. 1983; & JP-A-58 111 391 (Hitachi Seisakusho K.K.), 02-07-1983.

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