Internal reduced-voltage generator for semiconductor integrated

Details Internal reduced-voltage generator for semiconductor integrated Internal reduced-voltage generator for semiconductor integrated

1993-10-06

1996-09-10

Cunningham, Terry

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327543, 327540, 327544, 323315, 323316, G05F 302

Patent

active

055549535

ABSTRACT:
A reference voltage generator is composed of a first constant-voltage generator consisting of three p-type MOS transistors for generating a first reference voltage Vref for use in the normal operation, which is independent of an external power-supply voltage VCC and of a second constant-voltage generator consisting of two p-type MOS transistors and one n-type MOS transistor for generating a second reference voltage Vrefbi for use in a burn-in acceleration test, which is dependent on VCC. The output of each of the constant-voltage generators is feedbacked to the other constant-voltage generator as its input. Two differential amplifiers and two output drivers output, as an internal reduced voltage Vint, the higher one of Vref and Vrefbi which are outputted from the reference voltage generator. Since Vint is generated based on the two outputs Vref and Vrefbi which are outputted from the single reference voltage generator and which are related to each other, the power consumption and layout area of an internal reduced-voltage generator, which is suitable for the burn-in, can be reduced.

REFERENCES:
patent: 4359680 (1982-11-01), Hellums et al.
patent: 4375596 (1983-03-01), Hoshi
patent: 4461991 (1984-07-01), Smith
patent: 4578633 (1986-03-01), Aoki
patent: 4808909 (1989-02-01), Eddlemon
patent: 4812735 (1989-03-01), Sawada et al.
patent: 5272393 (1993-12-01), Horiguchi et al.
patent: 5426616 (1995-06-01), Kajigaya et al.
patent: 5434498 (1995-07-01), Cordoba et al.
M. Horiguchi et al., "DRAM Voltage Limiter for Burn-In", Technical Report of IEICE, ICD91-129, 1991, pp. 25-32.

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