Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1988-06-14
1990-01-02
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118725, 118726, C23C 1600
Patent
active
048905747
ABSTRACT:
A CVD apparatus including an internal reactor for in-situ generation of source gases for the CVD reaction. The internal reactor comprises a shell for containing solid precursor material, inlet and outlet means for a precursor gas and the gaseous product respectively, and preferably gas distribution means and means for preventing entrainment of the solid precursor in the gas flow. The internal reactor is positioned within the CVD reactor to provide the optimum temperature for the reaction taking place within the internal reactor.
REFERENCES:
patent: Re29420 (1977-09-01), Lindstrom et al.
patent: 3977061 (1976-08-01), Lindstrom et al.
patent: 4000716 (1977-01-01), Kurata
patent: 4035541 (1977-07-01), Smith et al.
patent: 4112148 (1978-09-01), Fonzi
patent: 4269899 (1981-05-01), Fuyama
patent: 4314873 (1982-02-01), Wieder
patent: 4336305 (1982-06-01), Tanaka
patent: 4576836 (1986-03-01), Colmet et al.
patent: 4609562 (1986-09-01), Isenberg et al.
patent: 4619866 (1986-10-01), Smith et al.
patent: 4629661 (1986-12-01), Hillert et al.
patent: 4699082 (1987-10-01), Hakim
D'Angelo Charles
Rebenne Helen E.
Sarin Vinod K.
Bueker Richard
Craig Frances P.
GTE Laboratories Incorporated
LandOfFree
Internal reactor for chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Internal reactor for chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Internal reactor for chemical vapor deposition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1378295