Internal low voltage transformation circuit of static random acc

Static information storage and retrieval – Powering

Patent

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Details

36518902, 365227, 365228, 365229, 36523006, G11C 800, G11C 1141

Patent

active

050460528

ABSTRACT:
In a static RAM having an internal low voltage transformation circuit, a word line drive circuit is provided which applies a low voltage, from an internal low voltage transformation circuit to a word line during read-out to improve the static RAM operating margin. The internal low voltage transformation circuit is formed by a reference voltage supply circuit and an internal voltage control circuit. A data hold voltage is supplied, when the static RAM is operating at a lower voltage, by a power pull-down device having a lower power consumption than the internal low voltage transformation circuit so as to achieve power consumption savings.

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