Internal gettering of oxygen in III-V compound semiconductors

Details Internal gettering of oxygen in III-V compound semiconductors Internal gettering of oxygen in III-V compound semiconductors

1992-09-16

1993-12-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

For compound semiconductor

257285, 257610, 257612, H01L 29167, H01L 2980, H01L 29207, H01L 29227

Patent

active

052723739

ABSTRACT:
An article of manufacture are disclosed comprising substantially increasing the electrical activation and mobility of electrons in a III-V semiconductor material containing minor amounts of oxygen by doping a III-V crystalline material with an n-type dopant and adding or implanting an oxygen reactive element in the III-V material where the doses of dopant and implanted oxygen reactive element are low enough to effect this increase. These doses typically do not exceed about 1E13 cm.sup.-2 and 4.5E12 cm.sup.-2 respectively. The added or implanted oxygen reactive element preferably is at a dose less than the n-type dopant. Experimental data indicate that the added or implanted oxygen reactive element acts as a gettering agent to form an oxygen depleted zone between dopant and oxygen reactive element regions.

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