Internal current limit and overvoltage protection method

Details Internal current limit and overvoltage protection method Internal current limit and overvoltage protection method

1991-05-17

1992-07-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437 64, 437909, 148DIG11, H01L 21265

Patent

active

051302624

ABSTRACT:
A method of internally limiting current and providing overvoltage protection in a semiconductor device comprises providing a semiconductor device having at least a first junction wherein both sides of the junction have predetermined dopant concentrations and wherein the first junction is spaced apart a predetermined distance from either a second junction or current blocking means. The predetermined dopant concentrations and distance are such that when a predetermined voltage is applied to the device, a depletion region from the first junction encounters either a depletion region from the second junction or current blocking means, thereby pinching off current at a desired voltage. The pinch-off voltage may be varied by adjusting the distance between the first junction and either the second junction or current blocking means and also by adjusting the predetermined dopant concentrations.

REFERENCES:
patent: 4132996 (1979-01-01), Baliga
patent: 4331961 (1982-05-01), Baliga

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