Internal current confinement type semiconductor light emission d

Details Internal current confinement type semiconductor light emission d Internal current confinement type semiconductor light emission d

1986-06-17

1988-08-30

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

047682000

ABSTRACT:
A semiconductor light emission device includes: a first conductivity type semiconductor substrate which has a pair of confronting resonator end surfaces and a hollow section provided thereon. The hollow section is arranged in a direction vertical the direction in which the resonator end surfaces confront each other. A second conductivity type current blocking layer having a flat upper surface is provided on the entire upper surface of the semiconductor substrate. A stripe groove is provided in the current blocking layer extending in a direction between the resonator end surfaces in such a manner that the groove reaches only within the current blocking layer at the hollow section and reaches the semiconductor substrate through the current blocking layer at portions outside the hollow section. A first conductivity type lower clad layer is provided on the entire upper surface of the current blocking layer so as to embed the stripe groove. A first or second conductivity type active layer is provided on the entire upper surface of the lower clad layer, and a second conductivity type upper clad layer is provided on the entire upper surface of the active layer.

REFERENCES:
patent: 4545057 (1985-10-01), Hayakawa et al.
patent: 4606033 (1986-08-01), Sakamoto
patent: 4679200 (1987-07-01), Matsui et al.

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