Internal compression bonded semiconductor device with a chip fra

Details Internal compression bonded semiconductor device with a chip fra Internal compression bonded semiconductor device with a chip fra

1997-01-29

1998-06-02

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257688, 257180, H01L 2974, H01L 31111

Patent

active

057604258

ABSTRACT:
The top-side (n-type) electrode and bottom-side (p-type) electrode of a Si chip with a p-n junction are pressed against a Cu cathode electrode and a Cu anode electrode via Mo plates respectively, thereby establishing electrical connection. The inner wall of a case is round and the Si chip is almost square. The top of the case is covered with ceramic, for example. A washer is a compression member. A chip frame holds the Si chip and Mo plates in compression positions and simultaneously determines their locations within the case. Specifically, the side face of the Si chip is not flush with the side face of each of the Mo plates. This enables the chip frame to make the creepage distance longer. Since the chip frame is a single chip frame without any joint, the creepage distance between the anode and cathode electrodes is defined by part of the chip frame that faces part of the surface of the Si chip and parts of the surfaces of the Mo plates sandwiching the Si chip between them.

REFERENCES:
patent: 4642671 (1987-02-01), Rohsler et al.
patent: 5278434 (1994-01-01), Niwayama
patent: 5641976 (1997-06-01), Taguchi et al.
Patent Abstracts of Japan, vol. 013, No. 240 (E-767), Jun. 6, 1989, JP 01 042843, Feb. 15, 1989.
Patent Abstracts of Japan, vol. 009, No. 248 (E-347), Oct. 4, 1985, JP 60 097672, May 31, 1985.

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