Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1994-02-10
1995-06-06
Breneman, R. Bruce
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
437133, H01L 2912
Patent
active
054219108
ABSTRACT:
An intermetallic compound semiconductor thin film comprises thin film made of the III-V group intermetallic compound InTlSb. Preferably, the thin film is grown by a vapor phase MOCVD method.
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Breneman R. Bruce
Fleck Linda J.
Northwestern University
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