Intermetallic compound layer in thin films for improved electrom

Details Intermetallic compound layer in thin films for improved electrom Intermetallic compound layer in thin films for improved electrom

1975-10-24

1977-04-12

James, Andrew J.

Compositions

Radioactive compositions

Nuclear reactor fuel

357 65, 357 68, 357 71, 252512, 75139, 174 685, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

040178900

ABSTRACT:
A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200.degree. C and 525.degree. C for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6.times.10.sup.-.sup.4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

REFERENCES:
patent: 3725309 (1973-04-01), Ames et al.
patent: 3743894 (1973-07-01), Hall et al.
IBM Technical Disclosure Bulletin; by Daley et al. vol. 13, No. 6, Nov. 1970, p. 1735.
IBM Technical Disclosure Bulletin; by Ainslie et al., vol. 13 No. 7, Dec. 1970, pp. 2014 and 2015.
IBM Technical Disclosure Bulletin; vol. 13, No. 12, May 71, by Heurle et al., p. 3793.
IBM Technical Disclosure Bulletin; by Heller et al.; vol. 15, No. 1, June 72, pp. 348 and 349.

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