Intermeshed guard bands for multiple voltage supply...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

Reexamination Certificate

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Details

C257S170000, C257S409000

Reexamination Certificate

active

07132696

ABSTRACT:
The present invention is generally directed to intermeshed guard bands for multiple voltage supply regions or structures on an integrated circuit, and methods of making same. In one illustrative embodiment, an integrated circuit is provided that comprises a plurality of voltage supply structures formed above a substrate, the plurality of voltage supply structures being at differing voltage levels, and a guard band comprised of at least one doped region formed in the substrate under each of the plurality of voltage supply regions, each of the guard bands being comprised of a plurality of fingers extending from each end of the guard bands.

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