Intermediate workpiece employing a mask for etching an aperture

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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437228, 148DIG51, 148 333, 257628, 257774, C23F 102

Patent

active

056980639

ABSTRACT:
A method for differentially etching an N-sided polygon aperture through a first major surface of a <100> silicon wafer along the <111> planes begins with depositing a mask and defining therein a first intermediate polygon aperture having at least 4N+2 sides, where N is a positive integer. At least one side is generally parallel to the <110> plane, and the intersection of a second side and a third side of the first intermediate polygon is located generally along a major crystal axis perpendicular to the <110> plane. The included angle between the second and third sides expands during anisotropic etching to form one of the N sides of the polygon located along the major axis perpendicular to the <110> plane.

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