Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2005-12-27
2005-12-27
Nguyen, Tuyen T (Department: 2832)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C336S200000
Reexamination Certificate
active
06979890
ABSTRACT:
An intermediate substrate is provided which reduces the effect of the difference in the coefficients of linear expansion between the terminals of the substrate and those of a semiconductor integrated circuit device, and which thus lowers the likelihood of disconnection due to thermal stress. The intermediate substrate, which is a planar member made of a polymeric material, includes a substrate core including a main core body having formed therein a sub-core compartment, and a ceramic sub-core section accommodated in the compartment. A first terminal array on the first principal surface side includes two types of terminals, functioning either as power source terminals or ground terminals, and a signal terminal. The array occupies an area entirely included within an orthogonally projected region of the sub-core section projected onto a reference plane parallel to the planar surface of the substrate core.
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Kambe Rokuro
Kasiwagi Tetsuya
Kimura Yukihiro
Sugimoto Yasuhiro
Suzuki Kazuhiro
Hunt, Jr. Ross F.
NGK Spark Plug, Ltd.
Nguyen Tuyen T
Stites & Harbison PLLC
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