Intermediate structure for integrated circuit devices

Details Intermediate structure for integrated circuit devices Intermediate structure for integrated circuit devices

1995-03-03

1998-05-12

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257759, 257760, H01L 2348, H01L 2352, H01L 2940

Patent

active

057510644

ABSTRACT:
A structure useful during the fabrication of semiconductor integrated circuits. At least one layer is formed over an insulating layer, and an opening formed to an underlying substrate. A conductive layer is formed over the at least one layer, which simultaneously forms a conductive plug in the bottom of the opening. An insulating layer plug is formed over the conductive plug to provide protection while the conductive layer on the at least one layer is removed.

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C. Hausamann & P. Mokrish, "The Dependence of Oxide & SOG Etch Rates on their Area Ratio", International IEEE, VLSI, pp. 293-298.

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