Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1996-10-25
1999-09-07
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 48, 257390, H01L 1900, G11C 1300
Patent
active
059490888
ABSTRACT:
An intermediate semiconductor product in a semiconductor fabrication process. The intermediate semiconductor product comprises an array of memory cells on a semiconductor substrate, where each cell includes an access device having an active semiconductor region and a memory element positioned in ohmic contact with the active semiconductor region. The intermediate semiconductor product further comprises a first wiring commonly connected to the memory element of each memory cell; and a second wiring commonly connected to the active semiconductor region of each memory cell, whereby, upon application of a voltage across the first and second wirings, conditioning current may flow in parallel through the memory elements to concurrently condition a programmable memory characteristic of the memory elements. A fabricating method is also provided. The method comprises the steps of forming an array of devices on a substrate, each device including first and second components, the first component having a first side and a second side electrically connected in series circuit with the second component at a node; applying a first wiring over the cells in electrical circuit connection with the first sides of the first components; applying a second wiring over the cells in electrical circuit connection with the nodes; and applying a voltage across the first and second wirings to produce parallel conditioning current flows through the first components and bypassing the second components; and removing the second wiring.
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Micro)n Technology, Inc.
Monin, Jr. Donald L.
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