Intermediate semiconductor device structures

Details Intermediate semiconductor device structures Intermediate semiconductor device structures

2008-06-24

2010-10-26

Stark, Jarrett J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C257SE23179, C438S401000, C438S462000

Reexamination Certificate

active

07821142

ABSTRACT:
An alignment mark mask element protects an underlying alignment mark during subsequent processing of a fabrication substrate. The alignment mark mask element is formed concurrent with formation of a photomask from a dual-tone photoresist that exhibits a pattern reversal upon exposure to an energy level. A portion of the dual-tone photoresist above the alignment mark is exposed to an energy sufficient to reverse a positive tone resist to a negative tone, which remains above the alignment mark after developing. The remainder of the dual-tone photoresist is exposed through a reticle at a lesser energy level and patterned to define aperture locations of a photomask for formation of semiconductor device features. In addition, a photomask for use on a fabrication substrate and an intermediate semiconductor device are disclosed. Methods of forming a photomask and an intermediate semiconductor device structure are also disclosed.

REFERENCES:
patent: 5087547 (1992-02-01), Taylor et al.
patent: 5451261 (1995-09-01), Fujii et al.
patent: 5640053 (1997-06-01), Caldwell
patent: 5695897 (1997-12-01), Mitome et al.
patent: 5733711 (1998-03-01), Juengling
patent: 5911108 (1999-06-01), Yen
patent: 5968687 (1999-10-01), Chang et al.
patent: 6057206 (2000-05-01), Nguyen et al.
patent: 6147394 (2000-11-01), Bruce et al.
patent: 6261918 (2001-07-01), So
patent: 6271602 (2001-08-01), Ackmann et al.
patent: 6290631 (2001-09-01), Chu et al.
patent: 6326278 (2001-12-01), Komuro
patent: 6342426 (2002-01-01), Li et al.
patent: 6350658 (2002-02-01), Miraglia
patent: 6368972 (2002-04-01), Maury et al.
patent: 6383888 (2002-05-01), Stirton
patent: 6391737 (2002-05-01), Ku et al.
patent: 6417076 (2002-07-01), Holscher et al.
patent: 6432790 (2002-08-01), Okamoto et al.
patent: 6462428 (2002-10-01), Iwamatsu
patent: 6815308 (2004-11-01), Holscher et al.
patent: 2002/0005594 (2002-01-01), Iwamatsu
patent: 2002/0052088 (2002-05-01), Okamoto et al.
patent: 2002/0052091 (2002-05-01), Holscher et al.
patent: 2002/0130425 (2002-09-01), Koike et al.
patent: 2003/0081188 (2003-05-01), Suzuki
patent: 220578 (1987-05-01), None
Gozdz et al., tert-Butoxycarbonylated novolaces as chemically amplified dual-tone resists, Polymer, 1992, vol. 33, No. 21, pp. 4653-4655.
http://www.mems-exchange.org/users/masks/intro-equipment.html, MEMS Exchange, “Layout and Mask Conventions,” pp. 1-10, May 8, 2002.
JSR Microelectronics, “Technical Data, Performance of KrF TMX1143Y (M78Y),” 4 pages, Jul. 21, 2004.

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