Intermediate semiconductor device structures

Details Intermediate semiconductor device structures Intermediate semiconductor device structures

2005-05-05

2008-07-22

Zarneke, David (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

Reexamination Certificate

active

07402908

ABSTRACT:
A method of forming a metal pattern on a dielectric layer that comprises forming at least one trench in a dielectric layer formed from a photosensitive, insulative material. A conformed metal layer is formed over the dielectric layer and into the at least one trench and a photoresist layer is formed over the metal layer. The photoresist layer may be deposited so that a photoresist material fills the at least one trench and forms a thinner coating on portions of the metal layer surrounding the at least one trench. At least a portion of the photoresist layer is selectively removed. For instance, portions of the photoresist layer surrounding the at least one trench may be removed while a portion of the photoresist layer remains therein. At least a portion of the metal layer is selectively removed, such as portions of the metal layer surrounding the at least one trench. The photoresist layer remaining in the trench may subsequently be removed. Intermediate semiconductor device structures are also disclosed.

REFERENCES:
patent: 5045903 (1991-09-01), Meyer et al.
patent: 5182234 (1993-01-01), Meyer
patent: 5256583 (1993-10-01), Hollinger
patent: 5648283 (1997-07-01), Tsang et al.
patent: 5789118 (1998-08-01), Liu et al.
patent: 5801417 (1998-09-01), Tsang et al.
patent: 5881125 (1999-03-01), Dao
patent: 6011314 (2000-01-01), Leibovitz et al.
patent: 6350705 (2002-02-01), Lin
patent: 6549268 (2003-04-01), Taniguchi
patent: 7105379 (2006-09-01), Tsao et al.

Affiliated with

Also associated with

Rating

Intermediate semiconductor device structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Intermediate semiconductor device structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Intermediate semiconductor device structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3967457