Intermediate potential generation circuit

Details Intermediate potential generation circuit Intermediate potential generation circuit

1996-12-10

1998-02-10

Sterrett, Jeffrey L.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323314, G05F 316

Patent

active

057173249

ABSTRACT:
An intermediate potential generation circuit having a controlled potential generation circuit including a voltage division circuit connected between a source potential node and a ground potential node, and generating first and second output potentials which deviate slightly from each other on both sides of the level of an intermediate potential. An N channel MOS transistor is connected between the source potential node and an intermediate potential output node, and has its gate receiving the potential corresponding to the first output potential. A P channel MOS transistor is connected between the intermediate potential output node and the ground potential node, and has its gate receiving the potential corresponding to the second output potential. The back gate of either one of the two MOS transistors is connected to the gate thereof.

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