Intermediate potential generating circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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Details

327530, 327539, 327538, 323313, 323315, 365226, G05F 316, G05F 320

Patent

active

058699970

ABSTRACT:
In an intermediate potential generating circuit provided in a DRAM, a reference potential generating circuit includes two combinations of a resistor element constituted by a P channel MOS transistor and a diode constituted by an N channel MOS transistor, and outputs a reference potential Vcc/2+Vthn. A charging circuit constituted by an N channel MOS transistor charges an output node to an intermediate potential Vcc/2 based on the reference potential. A discharging circuit includes one combination of a resistor element constituted by a P channel MOS transistor and a diode constituted by an N channel MOS transistor, and provides a prescribed current flowing from the output node. Reduction of supply voltage Vcc becomes possible by eliminating a diode constituted by a P channel MOS transistor which makes reduction of a threshold voltage Vthp difficult.

REFERENCES:
patent: 5361000 (1994-11-01), Koshikawa et al.

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