Intermediate construction having an edge defined feature

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S486000, C257S586000, C257S623000, C257S618000, C257S622000, C257S329000, C257S403000, C257S759000, C257S760000, C257S758000

Reexamination Certificate

active

06873050

ABSTRACT:
An intermediate construction of an integrated circuit includes a semiconductive substrate and a raised mandril over the substrate. The raised mandril may be raised out from the substrate and have at least one edge substantially perpendicular to the substrate and at least one beveled edge. A layer of structural material may form an edge defined feature on the at least one perpendicular edge.

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