Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2007-10-02
2007-10-02
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S069000, C365S072000
Reexamination Certificate
active
11585460
ABSTRACT:
A memory/logic cell layout structure includes a pair of memory/logic cells formed on a substrate. Each memory/logic cell (102, 104) can include a pair of memory areas to store data (106-0/106-1, 106-2/106-3), and a logic portion (108-0, 108-1) that receives the data stored therein. Memory areas and the logic portions of each memory/logic cell can be arranged on the substrate in a shape of an L, U, S, T, or Z to form a pair of interlocking memory/logic cells.
REFERENCES:
patent: 6370052 (2002-04-01), Hsu et al.
patent: 6704216 (2004-03-01), Cheng et al.
Banachowicz Bartosz
Wright Andrew
Haverstock & Owens LLP
NetLogic Microsystems, Inc.
Nguyen Tan T.
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