Interline transfer image sensor

Details Interline transfer image sensor Interline transfer image sensor

1992-11-13

1995-07-11

Ngo, Ngan V.

Television

Camera, system and detail

Solid-state image sensor

348290, 348298, 348303, 348314, 348316, 348319, 348320, 257223, 257230, 257232, 257233, 257236, H01L 2978, H01L 2714, H01L 3100

Patent

active

054325510

ABSTRACT:
The present invention is directed toward an image sensor array comprising a plurality of pixels. Each pixel includes a photodiode and a CCD channel region. An overflow drain region is provided adjacent the CCD channel region for extraction of excess charges. An insulated gate read-out transfer electrode is further provided above the CCD channel region and a portion of the substrate between the CCD channel region and the photodiode. Three different potentials are applied to the read-out transfer electrode for respectively storing charge in the photodiode, extracting excess charge from the photodiode while allowing signal charge to remain in the photodiode, and reading out signal charge from the photodiode.

REFERENCES:
patent: 4477735 (1984-05-01), Horii
patent: 4696021 (1987-09-01), Kawahara et al.
patent: 4912560 (1990-03-01), Osawa et al.
"A Photoelectric Conversion-Characteristic Control Method for Interline Transfer CCD Imager", IEEE Transactions on Electron Devices, vol. ED-32, No. 8, Aug. 1985, pp. 1511-1513.

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