Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-02-21
1997-06-10
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, H01L 27148, H01L 29768
Patent
active
056378939
ABSTRACT:
A solid-state image sensor has a photodiode region, a vertical CCD register for transferring a charge received at the photodiode region, a read-out gate region for reading the charge out to the vertical CCD register, and an element isolation region for isolating the photodiode region and the vertical CCD register. Ion-implantation is carried out first for the element isolation region and, thereafter, the photodiode region and the vertical CCD register are formed. The element isolation region is in a two layer configuration having a P.sup.+ -type region and a P-type region, and the P-type region is formed simultaneously with other regions including the read-out gate region. When the P-type region for the element isolation region is formed by ion-implantation before the formation of the photodiode region and the vertical CCD register, the fine patterning of the resist mask becomes unnecessary.
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N. Mutoh et al., "A 1/4 inch 380k Pixel IT-CCD Image Sensor Employing Gate-Assisted Punchthrough Read-Out Mode", IEDM 93, pp. 563-566.
Munson Gene M.
NEC Corporation
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