Interline transfer CCD image sensing device with electrode struc

Details Interline transfer CCD image sensing device with electrode struc Interline transfer CCD image sensing device with electrode struc

1989-02-10

1990-03-13

Nelms, David C.

Facsimile and static presentation processing

Facsimile

Recording apparatus

357 24, H01J 4014

Patent

active

049085182

ABSTRACT:
In interline transfer type are image sensor wherein photogenerated charge is transferred from a pixel into a charge coupled dvice (CCD) or shift register. The CCD structure is typically composed of two or more overlapping levels of polysilicon electrodes associated with each row of pixels. In accordance with invention, a CCD with simplified structure and hence improved manufacturability is described. The CCD utilizes ion implanted barrier regions, which may be self-aligned such as described by Losee et al. U.S. Pat. No. 4,613,402, to produce a device with single polysilicon electrode associated with each pixel.

REFERENCES:
patent: 4228445 (1980-10-01), Tasch et al.
patent: 4229752 (1980-10-01), Hynecek
patent: 4613402 (1986-09-01), Losee et al.
patent: 4772565 (1988-09-01), Kamimura et al.

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