Interlevel dielectric with multiple air gaps between conductive

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257760, 438622, 438624, H01L 2348, H01L 2352, H01L 2940

Patent

active

059947764

ABSTRACT:
A method of forming low dielectric insulation between pairs of conductive lines separated by insulating material of a level of interconnection for integrated circuits by selectively removing portions of the insulating material to create spaces for containing a gas with a dielectric constant of slightly above 1. Preferably, the insulating material is a conformal source of silicon oxide, such as tetraethylorthosilicate. The resultant method forms an insulation separating the conductive lines whose composite dielectric constant with the gas in the spaces between the insulating material is not greater than about 3 over a predetermined distance. An integrated circuit having a plurality of semiconductor devices being interconnected by conductive lines separated by insulating material and spaces containing a gas, composite dielectric constant of which is not greater than about 3 over a predetermined distance.

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patent: 5476817 (1995-12-01), Numata
patent: 5519250 (1996-05-01), Numata
patent: 5548159 (1996-08-01), Jeng

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