Interlayer insulating film, wiring structure and electronic...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S750000

Reexamination Certificate

active

07923819

ABSTRACT:
A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

REFERENCES:
patent: 6720659 (2004-04-01), Akahori
patent: 2003/0094698 (2003-05-01), Jiwari et al.
patent: 2004/0164418 (2004-08-01), Sugiura et al.
patent: 2005/0023694 (2005-02-01), Bjorkman et al.
patent: 2005/0186801 (2005-08-01), Uno et al.
patent: 2008/0254641 (2008-10-01), Kobayashi et al.
patent: 11-330075 (1999-11-01), None
patent: 2002-220668 (2002-08-01), None
patent: 2006-128591 (2006-05-01), None
patent: 2005-069367 (2005-07-01), None
International Search Report for PCT/JP2007/071734 dated Feb. 12, 2008.

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