Interlayer insulating film for semiconductor device

Details Interlayer insulating film for semiconductor device Interlayer insulating film for semiconductor device

1996-05-24

1999-02-16

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257760, H01L 2348, H01L 2352, H01L 2940

Patent

active

058724028

ABSTRACT:
Disclosed is an interlayer insulating film using low dielectric constant films, which can be improved in rigidity without any effect exerted on the reliability of a semiconductor device. The interlayer insulating film, which is formed in such a manner as to cover surroundings of interconnections formed on the semiconductor device, includes low dielectric constant films, each having a dielectric constant of from 1 to 3.5, which are formed in surroundings of the interconnections and between the interconnections; and a supporting layer formed in or through at least one of the low dielectric constant films formed on the upper and lower sides of the interconnections.

REFERENCES:
patent: 5338975 (1994-08-01), Cole, Jr. et al.
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5512775 (1996-04-01), Cho
patent: 5523615 (1996-06-01), Cho et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5616959 (1997-04-01), Jeng
patent: 5625232 (1997-04-01), Numata et al.
patent: 5708303 (1998-01-01), Jeng

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