Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1995-09-27
1997-07-08
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257637, H01L 2358
Patent
active
056464401
ABSTRACT:
A semiconductor device having a base or main body on which conductive interconnects are formed. At least the surface of the base is insulative. A first dielectric film is formed so as to cover the conductive interconnects. A second dielectric film having a relative dielectric constant smaller than that of the first dielectric film is formed at least between the conductive interconnects. The thickness of the second dielectric film between the conductive interconnects is greater than the height of the conductive interconnects by 10-100% in the directions of the height and depth. Films made of a material of a low dielectric constant are formed over and under the conductive interconnects via the first dielectric film or equivalent films.
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patent: 5117278 (1992-05-01), Bellersen et al.
patent: 5430329 (1995-07-01), Harada et al.
Alcorn et al, "Self-Aligned Silicon Nitride Polyimide Double Stop via Hole", Tech Disclosure Bulletin (IBM) vol. 27, No. 7A, Dec. 1984, pp. 3990-3993.
Clark S. V.
Kananen Ronald P.
Saadat Mahshid D.
Sony Corporation
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